MOSFET for producing a constant voltage

ABSTRACT

A circuit for producing a constant voltage comprises first and second MOSFETs, and first and second bias voltage producing devices. The first and second MOSFETs to which first and second input voltages are applied, respectively, are connected in series. The first bias voltage producing device produces a potential difference, which is equal to a threshold voltage of the first MOSFET, to be applied across drain and gate of the first MOSFET, and the second bias voltage producing device produces a potential difference, which is equal to a threshold voltage of the second MOSFET, to be applied across drain and gate of the second MOSFET, so that a wide range of an output voltage is produced at a connecting point of the first and second MOSFETs. Even more, the output voltage is stabilized in level, even if the threshold voltages fluctuate in a semiconductor device fabricating process.

FIELD OF THE INVENTION

The invention relates to a circuit for producing a constant voltage, and more particularly to a circuit in which a wide range of a voltage is produced with a stabilized characteristic.

BACKGROUND OF THE INVENTION

A circuit for producing a constant voltage is generally used to supply a predetermined voltage, which is different from an externally input voltage, to a semiconductor device. One type of a conventional circuit for producing a constant voltage comprises first and second P type MOS field effect transistors (each defined "P-MOSFET" hereinafter) connected in series. In the circuit, gate and drain of the first P-MOSFET are connected to source and substrate potential of the second P-MOSFET, source and substrate potential of the first P-MOSFET are connected to a first voltage input terminal, and gate and drain of the second P-MOSFET are connected to a second voltage input terminal, wherein a connecting point between the gate and the drain of the first P-MOSFET and the source and the substrate potential of the second P-MOSFET is connected to a constant voltage output terminal.

In operation, first and second voltages V₁ and V₂ (V₁ >V₂) are applied to the first and second voltage input terminals, respectively. A current of the first P-MOSFET is decreased to increase an output voltage at the constant voltage output terminal, and is "zero" when the output voltage ranges a value of V₁ -|V_(T1) | to the voltage V₁, where V_(T1) is a threshold voltage of the first P-MOSFET. On the other hand, a current of the second P-MOSFET is "zero" when the the output voltage ranges the voltage V₂ to a value of V₂ +|V_(T2) |, where V_(T2) is a threshold voltage of the second P-MOSFET, and is increased to increase the output voltage. When the currents of the first and second P-MOSFETs are equal to each other, a predetermined output voltage is obtained at the constant voltage output terminal in a stabilized state.

A stabilized output voltage V_(s) is defined in the equation (1). ##EQU1## where

g_(m1) is a mutual transfer conductance of the first P-MOSFET, and

g_(m2) is a mutual transfer conductance of the second P-MOSFET.

According to the conventional circuit for producing a constant voltage, however, there is a disadvantage that a range of an output voltage is narrow, as understood from reasons to be described later.

Further, there is a disadvantage that the output voltage V_(s) fluctuates in accordance with the threshold voltages V_(T1) and V_(T2) changed dependent on the conditions of the fabricating process of MOSFETs, as understood from the equation (1).

SUMMARY OF THE INVENTION

Accordingly, an object of the invention is to provide a circuit for producing a constant voltage from which a wide range of a constant output voltage is supplied.

A further object of the invention is to provide a circuit for producing a constant voltage in which a constant voltage is produced without being affected by a threshold voltage of MOSFETs.

According to the invention, a circuit for producing a constant voltage comprises first and second MOSFETs connected in series and each having one conduction type, and bias means connected between gate and drain of each MOSFET. The bias means produces potential differences equal to threshold voltages of the first and second MOSFETs, so that a wide range of an output voltage is produced at a connecting point between the first and second MOSFETs, and a stabilized output voltage does not change in level, even if the threshold voltages change in a semiconductor device fabricating process.

BRIEF DESCRIPTION OF DRAWINGS

The invention will be explained in more detail in conjuction with appended drawings; wherein,

FIG. 1 is a circuitry diagram of a conventional circuit for producing a constant voltage including two P-MOSFETs connected in series,

FIG. 2 to 4 are graphical diagrams showing currents of the two P-MOSFETs relative to an output voltage of the conventional circuit, respectively,

FIG. 5 is a circuitry diagram of a circuit for producing a constant voltage in a first embodiment according to the invention,

FIG. 6 is a graphical diagram showing currents of two P-MOSFETs connected in series in the circuit of the first embodiment relative to an output voltage of the circuit, and

FIG. 7 is a circuitry diagram of a circuit for producing a constant voltage in a second embodiment according to the invention.

DESCRIPTION OF PREFERRED EMBODIMENTS

Before explaining a circuit for producing a constant voltage in the first and second embodiments according to the invention, the aforementioned conventional circuit for producing a constant voltage will be explained in conjunction with FIGS. 1 to 4.

FIG. 1 shows a structure of the conventional circuit in which the first and second P-MOSFETs M₁ and M₂ are connected in series. In the circuit, the source and the gate of the first P-MOSFET M₁ are respectively connected to the source and the substrate potential of the second P-MOSFET M₂, the source and the substrate potential of the first P-MOSFET M₁ is connected to the first voltage input terminal V_(1N1), the gate and the drain of the second P-MOSFET is connected to the second voltage input terminal V_(1N2), and the connecting point between the gate and the drain of the P-MOSFET M₁ and the source and the substrate potential of the P-MOSFET M₂ is connected to the output terminal V_(OUT).

FIG. 2 shows the currents flowing through the P-MOSFETs M₁ and M₂ in the circuit for producing a constant voltage relative to an output voltage at the output terminal V_(OUT). When the threshold voltages of the first and second P-MOSFETs M₁ and M₂ are V_(T1) and V_(T2), and the input voltages V₁ and V₂ are applied to the input terminals V_(1N1) and V_(1N2) as explained before, no current flows through the first P-MOSFET M₁ when the output voltage ranges V₁ -|V_(T1) | to V₁, and a current flows through the first P-MOSFET M₁ in reversely proportional to the output voltage when it is below V₁ -|V_(T1) |, while no current flows through the second P-MOSFET M₂ when the output voltage ranges V₂ to V₂ +|V_(T2) |, and a current flows through the second P-MOSFET M₂ in proportional to the output voltage when it is above V₂ +|V_(T2) |. When the currents flowing through the P-MOSFETs M₁ and M₂ are equal to each other, the stabilized output voltage V_(s) is obtained at the output terminal V_(out). The level of the stabilized output voltage V_(s) is determined in accordance with the aforementioned equation (1).

Here, it is assumed that the input voltage V₁ is 10 V, the input voltage V₂ is 5 V, the threshold voltages V_(T1) and V_(T2) are -1 V, and the ratio of the mutual transfer conductances g_(m1) and g_(m2) is 2/1. Thus, lines M₁ and M₂ indicating currents flowing through the first and second P-MOSFETs M₁ and M₂ relative to the output voltage at the output terminal V_(OUT) are obtained as shown in FIG. 3, so that the stabilized output voltage V_(s) is 8 V. In this situation, the lines M₁ and M₂ changes as shown in FIG. 4, where the threshold voltages V_(T1) and V_(T2) of the first and second P-MOSFETs M₁ and M₂ change from -1 V to -0.5 V, so that the stabilized output voltage V_(s) changes from 8 V to 8.17 V. This is one of the aforemention disadvantages. Further, it is clearly understood from FIG. 2 that a range of the output voltage at the output terminal V_(OUT) is narrow. This is the other disadvantage. These disadvantages are overcome in a circuit for producing a constant voltage according to the invention.

Next, a circuit for producing a constant voltage in the first embodiment according to invention will be explained in conjunction with FIGS. 5 and 6.

In FIG. 5, there is shown the circuit for producing a constant voltage which comprises P-MOSFETs M₁₁, M₁₂, M₁₃ and M₁₄. In the circuit, the P-MOSFETs M₁₁ and M₁₂ are connected in series between first and second voltage input terminals V_(1N1) and V_(1N2), source and substrate potential of the P-MOSFET M₁₃ are connected to drain of the P-MOSFET M₁₁, gate and drain of the P-MOSFET M₁₃ are connected to gate of the P-MOSFET M₁₁, source and substrate potential of the P-MOSFET M₁₄ are connected to drain of the P-MOSFET M₁₂, gate and drain of the P-MOSFET M₁₄ are connected to gate of the P-MOSFET M₁₂, and a connecting point of the P-MOSFETs M₁₁ and M₁₂ is connected to an output terminal V_(OUT).

In operation, input voltages V₁ and V₂ are applied to the first and second voltage input terminals V_(1N1) and V_(1N2). Here, it is assumed that threshold voltages of the P-MOSFETs M₁₁, M₁₂, M₁₃ and M₁₄ are equal to each other to be "V_(TH) ". Thus, a gate voltage V_(G11) of the P-MOSFET M₁₁ is obtained in the presence of the P-MOSFET M₁₃ as follows.

    V.sub.G11 =V.sub.D11 -|V.sub.TH |        (2)

where V_(D11) is a drain voltage of the P-MOSFET M₁₁. Then, a current flowing through the P-MOSFET M₁₁ is indicated by a line M₁₁ in FIG. 6, and is reversely proportional to the drain voltage V_(D11) equal to an output voltage at the output terminal V_(OUT), where the output voltage is below the first input voltage V₁. On the other hand, a gate voltage V_(G12) of the P-MOSFET M₁₂ is obtained in the presence of the P-MOSFET M₁₄ as follows.

    V.sub.G12 =V.sub.D12 -|V.sub.TH |        (3)

where V_(D12) is a drain voltage of the P-MOSFET M₁₂. Then, a current flowing through the P-MOSFET M₁₂ is indicated by a line M₁₂ in FIG. 6, and is proportional to a source voltage equal to the output voltage, where the output voltage is above the second input voltage V₂. The stabilized output voltage V_(s) is obtained from a crossing point of the lines M₁₁ and M₁₂, and is determined in accordance with the equation (4). ##EQU2## where

g_(m11) is a mutual transfer conductance of the P-MOSFET M₁₁, and

g_(m12) is a mutual transfer conductance of the P-MOSFET M₁₂.

As understood from the equation (4), the output voltage at the output terminal V_(OUT) can be arbitrarily set, in the range between the voltages V₁ and V₂ applied to the first and second voltage input terminals V_(1N1) and V_(1N2), in accordance with the setting of the mutual transfer conductances g_(m11) and g_(m12). Even more, the output voltage does not change under the conditions that the threshold voltages of the P-MOSFETs M₁₁, M₁₂, M₁₃ and M₁₄ are equal to each other, even if the threshold voltages change.

In FIG. 7, there is shown a circuit for producing a constant voltage in the second embodiment according to the invention, wherein like parts are indicated like reference symbols in the first embodiment. In the circuit, first and second P-MOSFETs M₁₁ and M₁₂ are connected in series between first and second voltage input terminals V_(1N1) and V_(1N2), source and substrate potential of P-MOSFET M₁₃ are connected to drain of the P-MOSFET M₁₁, gate and drain of the P-MOSFET M₁₃ are connected to gate of the P-MOSFET M₁₁, source and substrate potential of P-MOSFET M₁₄ are connected to drain of the P MOSFET M₁₂, and gate and drain of the P-MOSFET M₁₄ are connected to gate of the P-MOSFET M₁₂. In the circuit, further, drain of N type depletion MOSFET M₁₅ is connected to a connecting point between the gate of the P-MOSFET M₁₁ and the gate and the drain of the P-MOSFET M₁₃, gate and source of the N type depletion MOSFET M₁₅ are connected to a ground potential terminal V_(G1) connected to the ground potential, drain of N type depletion MOSFET M₁₆ is connected to a connecting point between the gate of the P-MOSFET M₁₂ and the gate and the drain of the P-MOSFET M₁₄, gate and source of the N type depletion MOSFET M₁₆ are connected to a ground potential terminal V_(G2) connected to the ground potential, and a connecting point between the first and second P-MOSFETs M₁₁ and M₁₂ is connected to an output terminal V_(OUT).

In operation, the same characteristic of an output voltage as that in the first embodiment is obtained at the output terminal V_(OUT). Even more, minute currents flow from the connecting point between the gate of the P-MOSFET M₁₁ and the gate and the drain of the P-MOSFET M₁₃ and the connecting point between the gate of the P-MOSFET M₁₂ and the gate and the drain of the P-MOSFET M₁₄ through the N type depletion MOSFETs M₁₅ and M₁₆ to the ground potential terminals V_(G1) and V_(G2), respectively, where the first and second voltages V₁ and V₂ applied to the input terminals V_(1N1) and V_(1N2) fluctuate, so that the gates of the P-MOSFETs M₁₁ and M₁₂ are under a floating state, thereby avoiding an operation instability of the circuit.

In a circuit for producing a constant voltage according to the invention, as explained above, first and second MOSFETs each having one conduction type are connected in series between first and second voltage sources, and bias means is connected between gate and drain of each MOSFET, wherein the bias means produces a potential difference equal to a threshold voltage of each MOSFET, so that a wide range of an output voltage can be produced, and an output voltage characteristic is maintained to be constant, even if a threshold voltage changes in a semiconductor device fabricating process.

Although the invention has been described with respect to specific embodiment for complete and clear disclosure, the appended claims are not to thus limited but are to be construed as embodying all modification and alternative constructions that may occur to one skilled in the art which fairly fall within the basic teaching herein set forth. 

What is claimed is:
 1. A circuit for producing a constant voltage: comprising,first and second MOSFETs connected in series and each having one conduction type; bias means connected between gate and drain for each of said first and second MOSFETs; and first and second voltage sources connected to said first and second MOSFETs, respectively; wherein said bias means produces potential differences equal to threshold levels of a MOSFET, whereby a wide range of a stabilized output voltage is produced at a connecting point of said first and second MOSFETs.
 2. A circuit for producing a constant voltage according to claim 1,wherein each of said first and second MOSFETs is such that substrate potential is equal to source potential; and said bias means includes third and fourth MOSFETs each having said one conduction type; source and substrate of said third MOSFET being connected to said drain of said first MOSFET, and drain and gate of said third MOSFET being connected to said gate of said first MOSFET; and source and substrate of said fourth MOSFET being connected to said drain of said second MOSFET, and drain and gate of said third MOSFET being connected to said gate of said second MOSFET.
 3. A circuit for producing a constant voltage according to claim 2, further, comprising,means for floating said gates of said first and second MOSFETs when first and second voltages of said first and second voltage sources fluctuate.
 4. A circuit for producing a constant voltage according to claim 3,wherein said means for floating includes first and second N type depletion MOSFETs; drain of said first N type depletion MOSFET being connected to a connecting point of said drain and said gate of said third MOSFET, and source and gate of said first N type depletion MOSFET being connected to a ground potential; and drain of said second N type depletion MOSFET being connected to a connecting point of said drain and said gate of said fourth MOSFET, and source and gate of said second N type depletion MOSFET being connected to a ground potential. 